Solution patterning of ultrafine ITO and ZnRh₂O₄ nanowire array below 20 nm without etching process.
Identifieur interne : 001133 ( Main/Exploration ); précédent : 001132; suivant : 001134Solution patterning of ultrafine ITO and ZnRh₂O₄ nanowire array below 20 nm without etching process.
Auteurs : RBID : pubmed:21814701English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Polymethyl Methacrylate, Polystyrenes, Rhodium, Tin Compounds, Zinc Compounds.
- chemistry : Nanowires.
- ultrastructure : Nanowires.
- Particle Size.
Abstract
Transparent conductive patterns have significant applications in various optoelectronic devices. A low cost solution process to directly fabricate transparent conductive oxide nanopatterns was developed without a conventional lithographic or etching process. A uniform and high density array of ITO and ZnRh(2)O(4) nanopatterns was fabricated with block copolymer self-assembly and spin coating technology. A low resistivity of about 3-9 × 10(-4)Ω cm and high transmission of 90% in the visible spectrum region was demonstrated with uniform ITO nanopatterns with feature size of 24 nm. The first p-type ZnRh(2)O(4) nanopattern was also fabricated with low resistivity and small feature size of 15 nm. This cost-efficient and large area scalable process can fabricate patterns with feature size down to sub-20 nm, providing a faster patterning capability compared to conventional photolithography and etching processes.
DOI: 10.1039/c1nr10479a
PubMed: 21814701
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Solution patterning of ultrafine ITO and ZnRh₂O₄ nanowire array below 20 nm without etching process.</title><author><name sortKey="Xia, Guodong" uniqKey="Xia G">Guodong Xia</name><affiliation wicri:level="1"><nlm:affiliation>Department of Mechanical Engineering, the Hong Kong Polytechnic University, Kowloon, Hong Kong. apgdxia@polyu.edu.hk</nlm:affiliation><country xml:lang="fr">Hong Kong</country><wicri:regionArea>Department of Mechanical Engineering, the Hong Kong Polytechnic University, Kowloon</wicri:regionArea></affiliation></author><author><name sortKey="Wang, Sumei" uniqKey="Wang S">Sumei Wang</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1039/c1nr10479a</idno><idno type="RBID">pubmed:21814701</idno><idno type="pmid">21814701</idno><idno type="wicri:Area/Main/Corpus">001226</idno><idno type="wicri:Area/Main/Curation">001226</idno><idno type="wicri:Area/Main/Exploration">001133</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Nanowires (chemistry)</term><term>Nanowires (ultrastructure)</term><term>Particle Size</term><term>Polymethyl Methacrylate (chemistry)</term><term>Polystyrenes (chemistry)</term><term>Rhodium (chemistry)</term><term>Tin Compounds (chemistry)</term><term>Zinc Compounds (chemistry)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Polymethyl Methacrylate</term><term>Polystyrenes</term><term>Rhodium</term><term>Tin Compounds</term><term>Zinc Compounds</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanowires</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Particle Size</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transparent conductive patterns have significant applications in various optoelectronic devices. A low cost solution process to directly fabricate transparent conductive oxide nanopatterns was developed without a conventional lithographic or etching process. A uniform and high density array of ITO and ZnRh(2)O(4) nanopatterns was fabricated with block copolymer self-assembly and spin coating technology. A low resistivity of about 3-9 × 10(-4)Ω cm and high transmission of 90% in the visible spectrum region was demonstrated with uniform ITO nanopatterns with feature size of 24 nm. The first p-type ZnRh(2)O(4) nanopattern was also fabricated with low resistivity and small feature size of 15 nm. This cost-efficient and large area scalable process can fabricate patterns with feature size down to sub-20 nm, providing a faster patterning capability compared to conventional photolithography and etching processes.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">21814701</PMID><DateCreated><Year>2011</Year><Month>09</Month><Day>02</Day></DateCreated><DateCompleted><Year>2012</Year><Month>01</Month><Day>03</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">2040-3372</ISSN><JournalIssue CitedMedium="Internet"><Volume>3</Volume><Issue>9</Issue><PubDate><Year>2011</Year><Month>Sep</Month><Day>1</Day></PubDate></JournalIssue><Title>Nanoscale</Title><ISOAbbreviation>Nanoscale</ISOAbbreviation></Journal><ArticleTitle>Solution patterning of ultrafine ITO and ZnRh₂O₄ nanowire array below 20 nm without etching process.</ArticleTitle><Pagination><MedlinePgn>3598-600</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c1nr10479a</ELocationID><Abstract><AbstractText>Transparent conductive patterns have significant applications in various optoelectronic devices. A low cost solution process to directly fabricate transparent conductive oxide nanopatterns was developed without a conventional lithographic or etching process. A uniform and high density array of ITO and ZnRh(2)O(4) nanopatterns was fabricated with block copolymer self-assembly and spin coating technology. A low resistivity of about 3-9 × 10(-4)Ω cm and high transmission of 90% in the visible spectrum region was demonstrated with uniform ITO nanopatterns with feature size of 24 nm. The first p-type ZnRh(2)O(4) nanopattern was also fabricated with low resistivity and small feature size of 15 nm. This cost-efficient and large area scalable process can fabricate patterns with feature size down to sub-20 nm, providing a faster patterning capability compared to conventional photolithography and etching processes.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Xia</LastName><ForeName>Guodong</ForeName><Initials>G</Initials><Affiliation>Department of Mechanical Engineering, the Hong Kong Polytechnic University, Kowloon, Hong Kong. apgdxia@polyu.edu.hk</Affiliation></Author><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Sumei</ForeName><Initials>S</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>08</Month><Day>04</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanoscale</MedlineTA><NlmUniqueID>101525249</NlmUniqueID><ISSNLinking>2040-3364</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Polystyrenes</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Tin Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Zinc Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>poly(styrene-block-methyl methacrylate)</NameOfSubstance></Chemical><Chemical><RegistryNumber>71243-84-0</RegistryNumber><NameOfSubstance>indium tin oxide</NameOfSubstance></Chemical><Chemical><RegistryNumber>9011-14-7</RegistryNumber><NameOfSubstance>Polymethyl Methacrylate</NameOfSubstance></Chemical><Chemical><RegistryNumber>DMK383DSAC</RegistryNumber><NameOfSubstance>Rhodium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Nanowires</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Polymethyl Methacrylate</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Polystyrenes</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Rhodium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Tin Compounds</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Zinc Compounds</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>8</Month><Day>4</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2011</Year><Month>9</Month><Day>1</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>8</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>8</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>1</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c1nr10479a</ArticleId><ArticleId IdType="pubmed">21814701</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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